tsal7200 www.vishay.com vishay semiconductors rev. 2.0, 04-jul-16 1 document number: 81012 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high power infrared emitting diode, 940 nm, gaalas, mqw description tsal7200 is an infrared, 940 nm emitting diode in gaalas multi quantum well (mqw) tech nology with high radiant power molded in a clear, untinted plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? peak wavelength: ? p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 17 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? infrared remote control units with high power requirements ? free air transmission systems ? infrared source for optical counters and card readers note ? test conditions see table basic characteristics note ? moq: minimum order quantity 94 8389 product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) tsal7200 72 17 940 15 ordering information ordering code packaging remarks package form tsal7200 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power di ssipation p v 160 mw junction temperature t j 100 c operating temperature range t amb -40 to +85 c storage temperature range t stg -40 to +100 c soldering temperature t ? 5 s, 2 mm from case t sd 260 c thermal resistance junction / ambient j-std-051, leads 7 mm soldered on pcb r thja 230 k/w
tsal7200 www.vishay.com vishay semiconductors rev. 2.0, 04-jul-16 2 document number: 81012 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21211 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 230 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 t amb - ambient temperature (c) 21212 i f - forward current (ma) r thja = 230 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f - 1.35 1.6 v i f = 1 a, t p = 100 s v f -2.6- v temperature coefficient of v f i f = 1 ma tk vf --1.8-mv/k reverse current v r = 5 v i r - - 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j -40-pf radiant intensity i f = 100 ma, t p = 20 ms i e 40 72 200 mw/sr i f = 1 a, t p = 100 s i e - 600 - mw/sr radiant power i f = 100 ma, t p = 20 ms ? e -40-mw temperature coefficient of ? e i f = 20 ma tk ? e - -0.6 - %/k angle of half intensity ? - 17- deg peak wavelength i f = 100 ma ? p - 940 - nm spectral bandwidth i f = 100 ma ?? -30-nm temperature coefficient of ? p i f = 100 ma tk ? p -0.2-nm/k rise time i f = 100 ma t r -15-ns fall time i f = 100 ma t f -15-ns
tsal7200 www.vishay.com vishay semiconductors rev. 2.0, 04-jul-16 3 document number: 81012 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - relative radiant intens ity/power vs. ambient temperature fig. 8 - relative radi ant power vs. wavelength t p - pulse duration (ms) 96 11987 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 i - forward current (a) f t p /t = 0.01 i fsm = 1 a (single pulse) 0.05 0.1 0.5 1.0 1 10 100 1000 01 23 t p = 100 s t p /t= 0.001 v f - forward voltage (v) 21534 i f - forward current (ma) 0.1 1 10 100 1000 1 10 100 1000 i e - radiant inten s ity (mw/ s r) i f - forward current (ma) t p = 100 s 0.1 1 10 100 1000 1 10 100 1000 phi e - radiant power (mw) i f - forward current (ma) t p = 100 s -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t amb - ambient temperature (c) 0 10 20 30 40 50 60 70 80 90 100 840 880 920 960 1000 1040 - wavelength (nm) 21445 e rel - relative radiant power (%) i f = 30 ma
tsal7200 www.vishay.com vishay semiconductors rev. 2.0, 04-jul-16 4 document number: 81012 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - relative radiant inte nsity vs. angular displacement package dimensions in millimeters 0.4 0.2 0 14329 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative radiant intensity e rel ? - angular displacement 34.3 0.55 0.5 + 0.15 - 0.05 ? 5 0.15 area not plane technical drawing s according to din s pecification s 8.7 0.3 2.54 nom. 1 min. < 0.7 0.5 + 0.15 - 0.05 a c ? 5.8 0.15 7.7 0.15 0.6 + 0.2 - 0.1 r 2.49 ( s phere) (3.7)
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